Микросхема 24LC512-I/P, Последовательная энергонезависимая память [DIP-8]

Характеристики

24LC512-I/P, Последовательная энергонезависимая память [DIP-8]The 24LC512-I/P is a 512kb (64k x 8) I²C™ Serial Electrically Erasable PROM (EEPROM) capable of operation across a broad voltage range (2.5 to 5.5V). It has been developed for advanced, low-power applications such as personal communications and data acquisition. This device also has a page write capability of up to 128-byte of data. This device is capable of both random and sequential reads up to the 512k boundary. Functional address lines allows up to eight devices on the same bus, for up to 4Mb address space.

• 128-byte page write buffer
• 5ms Maximum page write time
• Hardware write-protect pin
• Factory programming available
• 400µA Maximum read current
• 1µA Maximum standby current
• 2-wire serial interface, I²C™ compatible
• Cascadable up to eight devices
• Schmitt trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• Self-timed erase/write cycle
• >4000V ESD protection
• More than 1 million erase/write cycles
• >200-year Data retention