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Микросхема AT93C46DN-SH-T, Энергонезависимая память, SPI …

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11,76 руб.

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Склад №110-12 дней11,76руб.10,94руб.10,58руб.10,35руб.9,64руб.9,41руб.9,17руб.8,47руб.
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Склад №25-7 дней21,29руб.19,52руб.19,17руб.18,70руб.17,40руб.17,05руб.16,58руб.14,94руб.
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Склад №35 дней27,52руб.25,40руб.24,81руб.24,23руб.22,58руб.21,99руб.21,52руб.19,29руб.
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Склад №47-10 дней14,11руб.12,94руб.12,70руб.12,35руб.11,52руб.11,29руб.10,94руб.9,88руб.
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Склад №55 дней27,17руб.25,05руб.24,46руб.23,87руб.23,17руб.22,34руб.21,17руб.19,05руб.

Характеристики

AT93C46DN-SH-T, Энергонезависимая память, SPI …The AT93C46DN-SH-T is a MICROWIRE-compatible 1kB 3-wire serial Electrically Erasable Programmable Read-Only Memory (EEPROM) organized as 64 words of 16-bit each (when the ORG pin is connected to VCC) and 128 words of 8-bit each (when the ORG pin is tied to ground). The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT93C46D is enabled through the chip select pin (CS) and accessed via a 3-wire serial interface consisting of data input (DI), data output (DO) and shift clock (SK). Upon receiving a read instruction at DI, the address is decoded and the data is clocked out serially on the DO pin. The write cycle is completely self-timed and no separate erase cycle is required before Write. The write cycle is only enabled when the part is in the Erase/write enable state. When CS is brought high following the initiation of a write cycle, the DO pin outputs the ready/busy status of the part.

• Low-voltage operation
• User-selectable internal organization
• 2MHz Clock rate (5V)
• Self-timed write cycle (5ms maximum)
• High reliability
• Endurance — 1000000 write cycles
• Data retention — 100 years